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cy14b104la, cy14b104na 4 mbit (512k x 8/256k x 16) nvsram cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document #: 001-49918 rev. *c revised july 15, 2009 features 20 ns, 25 ns, and 45 ns access times internally organized as 512k x 8 (cy14b104la) or 256k x 16 (cy14b104na) hands off automatic store on power down with only a small capacitor store to quantumtrap nonvolatile elements initiated by software, device pin, or autostore on power down recall to sram initiated by software or power up infinite read, write, and recall cycles 200,000 store cycles to quantumtrap 20 year data retention single 3v +20 % , -10 % operation commercial and industrial temperatures 48-ball fbga and 44/54-pin tsop-ii packages pb-free and rohs compliance functional description the cypress cy14b104la/cy14b104na is a fast static ram, with a nonvolatile element in each memory cell. the memory is organized as 512k bytes of 8 bits each or 256k words of 16 bits each. the embedded nonvolatile elements incorporate quantumtrap technology, producing the world?s most reliable nonvolatile memory. the sram provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable quantumtrap cell. data transfers from the sram to the nonvolatile elements (the store operation) takes place automatically at power down. on power up, data is restored to the sram (the recall operation) from the nonvolatile memory. both the store and recall operations are also available under software control. 67$7,&5$0 $55$< ; 5 2 : ' ( & 2 ' ( 5 &2/801,2 &2/801'(& , 1 3 8 7 % 8 ) ) ( 5 6 32:(5 &21752/ 6725(5(&$// &21752/ 4xdwuxp7uds ; 6725( 5(&$// 9 && 9 &$3 +6% $ $ $ $ $ $ $ $ 62)7:$5( '(7(&7 $ $ 2( &( :( %+( %/( $ $ $ $ $ $ $ $ $ $ $ '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 logic block diagram [1, 2, 3] notes 1. address a 0 - a 18 for x8 configuration and address a 0 - a 17 for x16 configuration. 2. data dq 0 - dq 7 for x8 configuration and data dq 0 - dq 15 for x16 configuration. 3. bhe and ble are applicable for x16 configuration only. [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 2 of 23 pinouts figure 1. pin diagram - 48 fbga figure 2. pin diagram - 44 pin tsop ii we v cc a 11 a 10 v cap a 6 a 0 a 3 ce nc nc dq 0 a 4 a 5 nc dq 2 dq 3 nc v ss a 9 a 8 oe v ss a 7 nc nc nc a 17 a 2 a 1 nc v cc dq 4 nc dq 5 dq 6 nc dq 7 nc a 15 a 14 a 13 a 12 hsb 3 2 6 5 4 1 d e b a c f g h a 16 a 18 nc dq 1 top view (x8) [4] [5] we v cc a 11 a 10 v cap a 6 a 0 a 3 ce dq 10 dq 8 dq 9 a 4 a 5 dq 13 dq 12 dq 14 dq 15 v ss a 9 a 8 oe v ss a 7 dq 0 bhe nc a 17 a 2 a 1 ble v cc dq 2 dq 1 dq 3 dq 4 dq 5 dq 6 dq 7 a 15 a 14 a 13 a 12 hsb 3 2 6 5 4 1 d e b a c f g h a 16 nc nc dq 11 (not to scale) top view (x16) [4] [5] (not to scale) notes 4. address expansion for 8 mbit. nc pin not connected to die. 5. address expansion for 16 mbi t. nc pin not connected to die. 6. hsb pin is not available in 44-tsop ii (x16) package. nc a 8 nc nc v ss dq 6 dq 5 dq 4 v cc a 13 dq 3 a 12 dq 2 dq 1 dq 0 oe a 9 ce nc a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 11 a 7 a 14 a 15 a 16 a 17 a 18 nc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 44 - tsop ii top view (not to scale) a 10 nc we dq 7 hsb nc v ss v cc v cap nc (x8) [4] [5] v ss dq 6 dq 5 dq 4 v cc a 13 dq 3 a 12 dq 2 dq 1 dq 0 ble a 9 ce a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 11 a 10 a 14 bhe oe a 15 a 16 a 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 44 - tsop ii top view (not to scale) we dq 7 a 0 v ss v cc dq 15 dq 14 dq 13 dq 12 dq 11 dq 10 dq 9 dq 8 v cap (x16) (x16) (x8) [6] [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 3 of 23 figure 3. pin diagram - 54 pin tsop ii (x16) table 1. pin definitions pin name i/o type description a 0 ? a 18 input address inputs used to select one of the 524,288 bytes of the nvsram for x8 configuration . a 0 ? a 17 address inputs used to select one of the 262,144 words of the nvsram for x16 configuration . dq 0 ? dq 7 input/output bidirectional data i/o lines for x8 configuration . used as input or output lines depending on operation. dq 0 ? dq 15 bidirectional data i/o lines for x16 configuration . used as input or output lines depending on operation. we input write enable input, active low . when selected low, data on the i/o pins is written to the specific address location. ce input chip enable input, active low . when low, selects the chip. when high, deselects the chip. oe input output enable, active low . the active low oe input enables the data output buffers during read cycles. i/o pins are tristated on deasserting oe high. bhe input byte high enable, active low . controls dq 15 - dq 8 . ble input byte low enable, active low . controls dq 7 - dq 0 . v ss ground ground for the device . must be connected to the ground of the system. v cc power supply power supply inputs to the device . hsb [6] input/output hardware store busy (hsb ) . when low this output indicates that a hardware store is in progress. when pulled low external to the chip it initiates a nonvolatile store operation. a weak internal pull up resistor keeps this pin high if not connected (connection optional ). after each store operation hsb is driven high for a short time with standard output high current. v cap power supply autostore capacitor . supplies power to the nvsram during power loss to store data from sram to nonvolatile elements. nc no connect no connect . this pin is not connected to the die. pinouts (continued) a 17 dq 7 dq 6 dq 5 dq 4 v cc dq 3 dq 2 dq 1 dq 0 nc a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 v cap we a 8 a 10 a 11 a 12 a 13 a 14 a 15 a 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 54 - tsop ii top view ( not to scale) oe ce v cc nc v ss nc a 9 nc nc nc nc nc nc 54 53 52 51 49 50 hsb bhe ble dq 15 dq 14 dq 13 dq 12 v ss dq 11 dq 10 dq 9 dq 8 (x16) [4] [5] [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 4 of 23 device operation the cy14b104la/cy14b104na nvsram is made up of two functional components paired in the same physical cell. they are a sram memory cell and a nonvolatile quantumtrap cell. the sram memory cell operates as a standard fast static ram. data in the sram is transferred to the nonvolatile cell (the store operation), or from the nonvolatile cell to the sram (the recall operation). using this unique arch itecture, all cells are stored and recalled in parallel. during the store and recall operations, sram read and write operations are inhibited. the cy14b104la/cy14b104na supports infinite reads and writes similar to a typical sram. in addition, it provides infinite recall operations from the nonvolatile cells and up to 200k store operations. see the truth table for sram operations on page 16 for a complete description of read and write modes. sram read the cy14b104la/cy14b104na performs a read cycle when ce and oe are low and we and hsb are high. the address specified on pins a 0-18 or a 0-17 determines which of the 524,288 data bytes or 262,144 words of 16 bits each are accessed. byte enables (bhe , ble ) determine which bytes are enabled to the output, in the case of 16-bit word s. when the read is initiated by an address transition, the output s are valid after a delay of t aa (read cycle 1). if the r ead is initiated by ce or oe , the outputs are valid at t ace or at t doe , whichever is later (read cycle 2). the data output repeatedly responds to address changes within the t aa access time without the need fo r transitions on any control input pins. this remains valid until another address change or until ce or oe is brought high, or we or hsb is brought low. sram write a write cycle is performed when ce and we are low and hsb is high. the address inputs must be stable before entering the write cycle and must re main stable until ce or we goes high at the end of the cycle. the data on the common i/o pins dq 0?15 are written into the memory if the data is valid t sd before the end of a we controlled write or bef ore the end of an ce controlled write. the byte enable inputs (bhe , ble ) determine which bytes are written, in the case of 16-b it words. it is recommended that oe be kept high duri ng the entire write cycle to avoid data bus contention on common i/o lines. if oe is left low, internal circuitry turns off the output buffers t hzwe after we goes low. autostore operation the cy14b104la/cy14b104na stores data to the nvsram using one of the following three storage operations: hardware store activated by hsb; software store activated by an address sequence; autostore on device power down. the autostore operation is a unique feature of quantumtrap technology and is enabled by default on the cy14b104la/cy14b104na. during a normal operation, the device draws current from v cc to charge a capacitor connected to the v cap pin. this stored charge is used by the chip to perform a single store operation. if the voltage on the v cc pin drops below v switch , the part automatically disconnects the v cap pin from v cc . a store operation is initiated with power provided by the v cap capacitor. note if the capacitor is not connected to v cap pin, autostore must be disabled using the soft sequence specified in preventing autostore on page 6. in case autostore is enabled without a capacitor on v cap pin, the device attempts an autostore operation without sufficient char ge to complete the store. this may corrupt the data stored in nvsram. figure 4 shows the proper connection of the storage capacitor (v cap ) for automatic store operation. refer to dc electrical characteristics on page 8 for the size of v cap . the voltage on the v cap pin is driven to v cc by a regulator on the chip. a pull up should be placed on we to hold it inactive during power up. this pull up is effective only if the we signal is tri-state during power up. many mpus tri-state their controls on power up. this should be verified when using the pull up. when the nvsram comes out of power-on-recall, the mpu must be active or the we held inactive until the mpu comes out of reset. to reduce unnecessary nonvolatile stores, autostore and hardware store operations are ignored unless at least one write operation has taken place since the most recent store or recall cycle. software initiat ed store cycles are performed regardless of whether a write operation has taken place. the hsb signal is monitored by the syst em to detect if an autostore cycle is in progress. figure 4. autostore mode hardware store operation the cy14b104la/cy14b104na provides the hsb [6] pin to control and acknowledge the store operations. use the hsb pin to request a hardware store cycle. when the hsb pin is driven low, the cy14b104la/cy14b104na conditionally initiates a store operation after t delay . an actual store cycle only begins if a write to the sram has taken place since the last store or recall cycle. the hsb pin also acts as an open drain driver that is internally driven low to indicate a busy condition when the store (initiated by any means) is in progress. sram write operations that are in progress when hsb is driven low by any means are given time (t delay ) to complete before the store operation is initiated. however, any sram write cycles requested after hsb goes low are inhibited until hsb returns high. in case the write latch is not set, hsb is not driven low by the cy14b104la/cy14b104na. but any sram read and write cycles are inhibited until hsb is returned high by mpu or other external source. during any store operation, regardless of how it is initiated, the cy14b104la/cy14b104na continues to drive the hsb pin 0.1uf vcc 10kohm v cap vcc we v cap v ss [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 5 of 23 low, releasing it only when the store is complete. when the store operation is complet ed, the cy14b104la/cy14b104na remains disabled until the hsb pin returns high. leave the hsb unconnected if it is not used. hardware recall (power up) during power up or after any low power condition (v cc cy14b104la, cy14b104na document #: 001-49918 rev. *c page 6 of 23 preventing autostore the autostore function is disabled by initiating an autostore disable sequence. a sequence of read operations is performed in a manner similar to the software store initiation. to initiate the autostore disable sequence, the following sequence of ce controlled read operations must be performed: 1. read address 0x4e38 valid read 2. read address 0xb1c7 valid read 3. read address 0x83e0 valid read 4. read address 0x7c1f valid read 5. read address 0x703f valid read 6. read address 0x8b45 autostore disable the autostore is re-enabled by initiating an autostore enable sequence. a sequence of read operations is performed in a manner similar to the software recall initiation. to initiate the autostore enable sequence, the following sequence of ce controlled read operations must be performed: 1. read address 0x4e38 valid read 2. read address 0xb1c7 valid read 3. read address 0x83e0 valid read 4. read address 0x7c1f valid read 5. read address 0x703f valid read 6. read address 0x4b46 autostore enable if the autostore function is disabled or re-enabled, a manual store operation (hardware or software) must be issued to save the autostore state through subsequent power down cycles. the part comes from the factory with autostore enabled. data protection the cy14b104la/cy14b104na protects data from corruption during low voltage conditions by inhibiting all externally initiated store and write operations. the low voltage condition is detected when v cc < v switch . if the cy14b104la/cy14b104na is in a write mode (both ce and we are low) at power up, after a recall or store, the write is inhibited until the sram is enabled after t lzhsb (hsb to output active). this protects against in advertent writes during power up or brown out conditions. noise considerations refer to cy application note an1064 . l h l 0x4e38 0xb1c7 0x83e0 0x7c1f 0x703f 0x4b46 read sram read sram read sram read sram read sram autostore enable output data output data output data output data output data output data active [8] l h l 0x4e38 0xb1c7 0x83e0 0x7c1f 0x703f 0x8fc0 read sram read sram read sram read sram read sram nonvolatile store output data output data output data output data output data output high z active i cc2 [8] l h l 0x4e38 0xb1c7 0x83e0 0x7c1f 0x703f 0x4c63 read sram read sram read sram read sram read sram nonvolatile recall output data output data output data output data output data output high z active [8] table 2. mode selection (continued) ce we oe, bhe , ble [3] a 15 - a 0 [7] mode i/o power [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 7 of 23 best practices nvsram products have been used effectively for over 15 years. while ease-of-use is one of t he product?s main system values, experience gained working with hundreds of applications has resulted in the following suggestions as best practices: the nonvolatile cells in this nvsram product are delivered from cypress with 0x00 written in all cells. incoming inspection routines at customer or co ntract manufacturer?s sites sometimes reprogram these values. final nv patterns are typically repeating patterns of aa, 55, 00, ff, a5, or 5a. end product?s firmware should not assume an nv array is in a set programmed state. routines that check memory content values to determine first time system configuration, cold or warm boot status, and so on should always program a unique nv pattern (that is, complex 4-byte pattern of 46 e6 49 53 hex or more random bytes) as part of the final system manufac- turing test to ensure these system routines work consistently. power up boot firmware routines should rewrite the nvsram into the desired state (for exam ple, autostore enabled). while the nvsram is shipped in a preset state, best practice is to again rewrite the nvsram into th e desired state as a safeguard against events that might flip the bit inadvertently such as program bugs and incoming inspection routines. the v cap value specified in this data sheet includes a minimum and a maximum value size. best practice is to meet this requirement and not exceed the maximum v cap value because the nvsram internal algorithm calculates v cap charge and discharge time based on this max v cap value. customers that want to use a larger v cap value to make sure there is extra store charge and store time should discuss their v cap size selection with cypress to understand any impact on the v cap voltage level at the end of a t recall period. [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 8 of 23 maximum ratings exceeding maximum ratings may impair the useful life of the device. these user guidelines are not tested. storage temperature ..................................?65 c to +150 c maximum accumulated storage time at 150 c ambient temperature..........................1000h at 85 c ambient temperature.................... ..20 years ambient temperature with power applied .............................................?55 c to +150 c supply voltage on v cc relative to gnd.......... ?0.5v to 4.1v voltage applied to outputs in high z state....................................... ?0.5v to v cc + 0.5v input voltage .......................................... ?0.5v to vcc + 0.5v transient voltage (<20 ns) on any pin to ground potential.................. ?2.0v to v cc + 2.0v package power dissipation capability (t a = 25c) ....................................................1.0w surface mount pb soldering temperature (3 seconds)...........................................+260 c dc output current (1 output at a time, 1s duration) ....15 ma static discharge voltage ......................................... > 2001v (per mil-std-883, method 3015) latch up current................................................... > 200 ma operating range range ambient temperature v cc commercial 0 c to +70 c 2.7v to 3.6v industrial ?40 c to +85 c 2.7v to 3.6v dc electrical characteristics over the operating range (v cc = 2.7v to 3.6v) parameter description test conditions min typ [9] max unit v cc power supply 2.7 3.0 3.6 v i cc1 average v cc current t rc = 20 ns t rc = 25 ns t rc = 45 ns values obtained without output loads (i out = 0 ma) commercial 65 65 50 ma ma ma industrial 70 70 52 ma ma ma i cc2 average v cc current during store all inputs don?t care, v cc = max average current for duration t store 10 ma i cc3 average v cc current at t rc = 200 ns, v cc (typ), 25c all i/p cycling at cmos levels. values obtained without output loads (i out = 0 ma). 35 ma i cc4 average v cap current during autostore cycle all inputs don?t care, v cc = max average current for duration t store 5ma i sb v cc standby current ce > (v cc ? 0.2v). v in < 0.2v or > (v cc ? 0.2v). standby current level after nonvolatile cycle is complete. inputs are static. f = 0 mhz. 5ma i ix [10] input leakage current (except hsb ) v cc = max, v ss < v in < v cc ?1 +1 a input leakage current (for hsb ) v cc = max, v ss < v in < v cc ?100 +1 a i oz off-state output leakage current v cc = max, v ss < v out < v cc , ce or oe > v ih or bhe /ble > v ih or we < v il ?1 +1 a v ih input high voltage 2.0 v cc + 0.5 v v il input low voltage v ss ? 0.5 0.8 v v oh output high voltage i out = ?2 ma 2.4 v v ol output low voltage i out = 4 ma 0.4 v v cap storage capacitor between v cap pin and v ss , 5v rated 61 68 180 f notes 9. typical values are at 25c, v cc = v cc (typ). not 100% tested. 10. the hsb pin has i out = -2 ua for v oh of 2.4v when both active high and low drivers are disabled. when they are enabled standard v oh and v ol are valid. this parameter is characterized but not tested. [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 9 of 23 ac test conditions input pulse levels ....................................................0v to 3v input rise and fall times (10% - 90%) ........................ < 3 ns input and output timing reference levels .................... 1.5v data retention and endurance parameter description min unit data r data retention 20 years nv c nonvolatile store operation 200 k capacitance in the following table, the capacitance parameters are listed. [11] parameter description test conditions max unit c in input capacitance t a = 25 c, f = 1 mhz, v cc = v cc (typ) 7pf c out output capacitance 7 pf thermal resistance in the following table, the thermal resistance parameters are listed. [11] parameter description test conditions 48-fbga 44-tsop ii 54-tsop ii unit ja thermal resistance (junction to ambient) test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with eia/jesd51. 28.82 31.11 30.73 c/w jc thermal resistance (junction to case) 7.84 5.56 6.08 c/w figure 5. ac test loads 3.0v output 5 pf r1 r2 789 3.0v output 30 pf r1 r2 789 for tri-state specs 577 577 11. these parameters are guaranteed by design but not tested. [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 10 of 23 ac switching characteristics parameters description 20 ns 25 ns 45 ns unit cypress parameters alt parameters min max min max min max sram read cycle t ace t acs chip enable access time 20 25 45 ns t rc [12] t rc read cycle time 20 25 45 ns t aa [13] t aa address access time 20 25 45 ns t doe t oe output enable to data valid 10 12 20 ns t oha [13] t oh output hold after address change 3 3 3 ns t lzce [11, 14] t lz chip enable to output active 3 3 3 ns t hzce [11, 14] t hz chip disable to output inactive 8 10 15 ns t lzoe [11, 14] t olz output enable to output active 0 0 0 ns t hzoe [11, 14] t ohz output disable to output inactive 8 10 15 ns t pu [11] t pa chip enable to power active 0 0 0 ns t pd [11] t ps chip disable to power standby 20 25 45 ns t dbe - byte enable to data valid 10 12 20 ns t lzbe [11] - byte enable to output active 0 0 0 ns t hzbe [11] - byte disable to output inactive 8 10 15 ns sram write cycle t wc t wc write cycle time 20 25 45 ns t pwe t wp write pulse width 15 20 30 ns t sce t cw chip enable to end of write 15 20 30 ns t sd t dw data setup to end of write 8 10 15 ns t hd t dh data hold after end of write 0 0 0 ns t aw t aw address setup to end of write 15 20 30 ns t sa t as address setup to start of write 0 0 0 ns t ha t wr address hold after end of write 0 0 0 ns t hzwe [11, 14,15] t wz write enable to output disable 8 10 15 ns t lzwe [11, 14] t ow output active after end of write 3 3 3 ns t bw - byte enable to end of write 15 20 30 ns switching waveforms figure 6. sram read cy cle #1: address controlled [ 12, 13, 16] address data output address valid previous data valid output data valid t rc t aa t oha notes 12. we must be high during sram read cycles. 13. device is continuously selected with ce , oe and bhe / ble low. 14. measured 200 mv from steady state output voltage. 15. if we is low when ce goes low, the outputs remain in the high impedance state. 16. hsb must remain high during read and write cycles. [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 11 of 23 figure 7. sram read cycle #2: ce and oe controlled [3, 12, 16] figure 8. sram write cycle #1: we controlled [3, 15, 16, 17] address valid address data output output data valid standby active high impedance ce oe bhe, ble i cc t hzce t rc t ace t aa t lzce t doe t lzoe t dbe t lzbe t pu t pd t hzbe t hzoe data output data input input data valid high impedance address valid address previous data t wc t sce t ha t bw t aw t pwe t sa t sd t hd t hzwe t lzwe we bhe, ble ce note 17. ce or we must be > v ih during address transitions. [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 12 of 23 figure 9. sram write cycle #2: ce controlled [3, 15, 16, 17] figure 10. sram write cycle #3: bhe and ble controlled [3, 15, 16, 17] data output data input input data valid high impedance address valid address t wc t sd t hd bhe, ble we ce t sa t sce t ha t bw t pwe data output data input input data valid high impedance address valid address t wc t sd t hd bhe, ble we ce t sce t sa t bw t ha t aw t pwe [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 13 of 23 autostore/power up recall parameters description 20 ns 25 ns 45 ns unit min max min max min max t hrecall [18] power up recall duration 20 20 20 ms t store [19] store cycle duration 8 8 8 ms t delay [20] time allowed to complete sram write cycle 20 25 25 ns v switch low voltage trigger level 2.65 2.65 2.65 v t vccrise [11] v cc rise time 150 150 150 s v hdis [11] hsb output disable voltage 1.9 1.9 1.9 v t lzhsb [11] hsb to output active time 5 5 5 s t hhhd [11] hsb high active time 500 500 500 ns switching waveforms figure 11. autostore or power up recall [21] v switch v hdis v vccrise t store t store t hhhd t hhhd t delay t delay t lzhsb t lzhsb t hrecall t hrecall hsb out autostore power- up recall read & write inhibited ( rwi ) power-up recall read & write brown out autostore power-up recall read & write power down autostore note note note v cc 1 1 notes 18. t hrecall starts from the time v cc rises above v switch. 19. if an sram write has not taken place since the last nonvolatile cycle, no autostore or hardware store takes place. 20. on a hardware store and autostore initiation, sram write operation continues to be enabled for time t delay . 21. read and write cycles are ignored during store, recall, and while v cc is below v switch. 22. hsb pin is driven high to v cc only by internal 100 kohm resistor, hsb driver is disabled. [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 14 of 23 software controlled store/recall cycle in the following table, the software controlled store and recall cycle parameters are listed. [23, 24] parameters description 20 ns 25 ns 45 ns unit min max min max min max t rc store/recall initiation cycle time 20 25 45 ns t sa address setup time 0 0 0 ns t cw clock pulse width 15 20 30 ns t ha address hold time 0 0 0 ns t recall recall duration 200 200 200 s switching waveforms figure 12. ce and oe controlled software store/recall cycle [24] figure 13. autostore enable/disable cycle t rc t rc t sa t cw t cw t sa t ha t lzce t hzce t ha t ha t ha t store /t recall t hhhd t lzhsb high impedance address #1 address #6 address ce oe hsb(storeonly) dq (data) rwi t delay note 25 t rc t rc t sa t cw t cw t sa t ha t lzce t hzce t ha t ha t ha t delay address #1 address #6 address ce oe dq (data) t ss note 25 notes 23. the software sequence is clocked with ce controlled or oe controlled reads. 24. the six consecutive addr esses must be read in the order listed in table 2 on page 5. we must be high during a ll six consecutive cycles. 25. dq output data at the sixth read may be invalid since the output is disabled at t delay time. [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 15 of 23 hardware store cycle parameters description 20 ns 25 ns 45 ns unit min max min max min max t dhsb hsb to output active time when write latch not set 20 25 25 ns t phsb hardware store pulse width 15 15 15 ns t ss [26, 27] soft sequence processing time 100 100 100 s switching waveforms figure 14. hardware store cycle [19] figure 15. soft sequence processing [26, 27] t phsb t phsb t delay t dhsb t delay t store t hhhd t lzhsb write latch set write latch not set hsb (in) hsb (out) dq (data out) rwi hsb (in) hsb (out) rwi hsb pin is driven high to v cc only by internal sram is disabled as long as hsb (in) is driven low. hsb driver is disabled t dhsb 100kohm resistor, address #1 address #6 address #1 address #6 soft sequence command t ss t ss ce address v cc t sa t cw soft sequence command t cw notes 26. this is the amount of time it takes to take action on a soft sequence command. vcc power must re main high to effectively reg ister command. 27. commands such as store and recall lock out i/o until operati on is complete which further increases this time. see the specif ic command. [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 16 of 23 truth table for sram operations hsb should remain high for sram operations. for x8 configuration ce we oe inputs/outputs [2] mode power h x x high z deselect/power down standby l h l data out (dq 0 ?dq 7 ); read active l h h high z output disabled active l l x data in (dq 0 ?dq 7 ); write active for x16 configuration ce we oe bhe [3] ble [3] inputs/outputs [2] mode power h x x x x high z deselect/power down standby l x x h h high z output disabled active l h l l l data out (dq 0 ?dq 15 ) read active lhlhldata out (dq 0 ?dq 7 ); dq 8 ?dq 15 in high z read active l h l l h data out (dq 8 ?dq 15 ); dq 0 ?dq 7 in high z read active l h h l l high z output disabled active l h h h l high z output disabled active l h h l h high z output disabled active l l x l l data in (dq 0 ?dq 15 ) write active l l x h l data in (dq 0 ?dq 7 ); dq 8 ?dq 15 in high z write active l l x l h data in (dq 8 ?dq 15 ); dq 0 ?dq 7 in high z write active [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 17 of 23 ordering information speed (ns) ordering code package diagram package type operating range 20 cy14b104la-zs20xct 51-85087 44-pin tsop ii commercial cy14b104la-zs20xc 51-85087 44-pin tsop ii cy14b104la-zs20xit 51-85087 44-pin tsop ii industrial cy14b104la-zs20xi 51-85087 44-pin tsop ii cy14b104la-ba20xct 51-85128 48-ball fbga commercial cy14b104la-ba20xc 51-85128 48-ball fbga cy14b104la-ba20xit 51-85128 48-ball fbga industrial cy14b104la-ba20xi 51-85128 48-ball fbga cy14b104na-zs20xct 51-85087 44-pin tsop ii commercial cy14b104na-zs20xc 51-85087 44-pin tsop ii cy14b104na-zs20xit 51-85087 44-pin tsop ii industrial cy14b104na-zs20xi 51-85087 44-pin tsop ii cy14b104na-ba20xct 51-85128 48-ball fbga commercial cy14b104na-ba20xc 51-85128 48-ball fbga cy14b104na-ba20xit 51-85128 48-ball fbga industrial cy14b104na-ba20xi 51-85128 48-ball fbga CY14B104NA-ZSP20XCT 51-85160 54-pin tsop ii commercial cy14b104na-zsp20xc 51-85160 54-pin tsop ii cy14b104na-zsp20xit 51-85160 54-pin tsop ii industrial cy14b104na-zsp20xi 51-85160 54-pin tsop ii 25 cy14b104la-zs25xct 51-85087 44-pin tsop ii commercial cy14b104la-zs25xc 51-85087 44-pin tsop ii cy14b104la-zs25xit 51-85087 44-pin tsop ii industrial cy14b104la-zs25xi 51-85087 44-pin tsop ii cy14b104la-ba25xct 51-85128 48-ball fbga commercial cy14b104la-ba25xc 51-85128 48-ball fbga cy14b104la-ba25xit 51-85128 48-ball fbga industrial cy14b104la-ba25xi 51-85128 48-ball fbga cy14b104na-zs25xct 51-85087 44-pin tsop ii commercial cy14b104na-zs25xc 51-85087 44-pin tsop ii cy14b104na-zs25xit 51-85087 44-pin tsop ii industrial cy14b104na-zs25xi 51-85087 44-pin tsop ii cy14b104na-ba25xct 51-85128 48-ball fbga commercial cy14b104na-ba25xc 51-85128 48-ball fbga cy14b104na-ba25xit 51-85128 48-ball fbga industrial cy14b104na-ba25xi 51-85128 48-ball fbga cy14b104na-ba25i 51-85128 48-ball fbga cy14b104na-zsp25xct 51-85160 54-pin tsop ii commercial cy14b104na-zsp25xc 51-85160 54-pin tsop ii cy14b104na-zsp25xit 51-85160 54-pin tsop ii industrial cy14b104na-zsp25xi 51-85160 54-pin tsop ii [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 18 of 23 45 cy14b104la-zs45xct 51-85087 44-pin tsop ii commercial cy14b104la-zs45xc 51-85087 44-pin tsop ii cy14b104la-zs45xit 51-85087 44-pin tsop ii industrial cy14b104la-zs45xi 51-85087 44-pin tsop ii cy14b104la-ba45xct 51-85128 48-ball fbga commercial cy14b104la-ba45xc 51-85128 48-ball fbga cy14b104la-ba45xit 51-85128 48-ball fbga industrial cy14b104la-ba45xi 51-85128 48-ball fbga cy14b104na-zs45xct 51-85087 44-pin tsop ii commercial cy14b104na-zs45xc 51-85087 44-pin tsop ii cy14b104na-zs45xit 51-85087 44-pin tsop ii industrial cy14b104na-zs45xi 51-85087 44-pin tsop ii cy14b104na-ba45xct 51-85128 48-ball fbga commercial cy14b104na-ba45xc 51-85128 48-ball fbga cy14b104na-ba45xit 51-85128 48-ball fbga industrial cy14b104na-ba45xi 51-85128 48-ball fbga cy14b104na-zsp45xct 51-85160 54-pin tsop ii commercial cy14b104na-zsp45xc 51-85160 54-pin tsop ii cy14b104na-zsp45xit 51-85160 54-pin tsop ii industrial cy14b104na-zsp45xi 51-85160 54-pin tsop ii ordering information (continued) speed (ns) ordering code package diagram package type operating range [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 19 of 23 part numbering nomenclature option: t - tape & reel blank - std. speed: 20 - 20 ns 25 - 25 ns data bus: l - x8 n - x16 density: 104 - 4 mb voltage: b - 3.0v cypress cy 14 b 104 l a -zs p 20 x c t nvsram 14 - auto store + software store + hardware store temperature: c - commercial (0 to 70c) i - industrial (?40 to 85c) package: ba - 48 fbga zs - tsop ii 45 - 45 ns x - pb-free blank - snpb p - 54 pin blank - 44 pin/48 ball die revision: blank - no rev a - 1 st rev [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 20 of 23 package diagrams figure 16. 44-pin tsop ii (51-85087) max min. dimension in mm (inch) 11.938 (0.470) plane seating pin 1 i.d. 44 1 18.517 (0.729) 0.800 bsc 0-5 0.400(0.016) 0.300 (0.012) ejector pin r g o k e a x s 11.735 (0.462) 10.058 (0.396) 10.262 (0.404) 1.194 (0.047) 0.991 (0.039) 0.150 (0.0059) 0.050 (0.0020) (0.0315) 18.313 (0.721) 10.058 (0.396) 10.262 (0.404) 0.597 (0.0235) 0.406 (0.0160) 0.210 (0.0083) 0.120 (0.0047) base plane 0.10 (.004) 22 23 top view bottom view 51-85087-*a [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 21 of 23 figure 17. 48-ball fbga - 6 mm x 10 mm x 1.2 mm (51-85128) package diagrams (continued) a 1 a1 corner 0.75 0.75 ?0.300.05(48x) ?0.25 m c a b ?0.05 m c b a 0.15(4x) 0.210.05 1.20 max c seating plane 0.530.05 0.25 c 0.15 c a1 corner top view bottom view 2 3 4 3.75 5.25 b c d e f g h 65 46 5 23 1 d h f g e c b a 6.000.10 10.000.10 a 10.000.10 6.000.10 b 1.875 2.625 0.36 51-85128-d [+] feedback [+] feedback
cy14b104la, cy14b104na document #: 001-49918 rev. *c page 22 of 23 figure 18. 54-pin tsop ii (51-85160) package diagrams (continued) 51-85160-** [+] feedback [+] feedback
document #: 001-49918 rev. *c revised july 15, 2009 page 23 of 23 all other products and company names mentioned in this document are the trademarks of their respective holders. cy14b104la, cy14b104na ? cypress semiconductor corporation, 2008-2009. the information contained herein is subject to change without notice. cypress s emiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or other rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement wi th cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. any source code (software and/or firmware) is owned by cypress semiconductor corporation (cypress) and is protected by and subj ect to worldwide patent protection (united states and foreign), united states copyright laws and internatio nal treaty provisions. cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the cypress source code and derivative works for the sole purpose of creating custom software and or firmware in su pport of licensee product to be used only in conjunction with a cypress integrated circuit as specified in the applicable agreement. any reproduction, modification, translation, compilation, or repre sentation of this source code except as specified above is prohibited without the express written permission of cypress. disclaimer: cypress makes no warranty of any kind, express or implied, with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose. cypress reserves the right to make changes without further notice to t he materials described herein. cypress does not assume any liability arising out of the application or use of any product or circuit described herein. cypress does not authori ze its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress? prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. use may be limited by and subject to the applicable cypress software license agreement. document history page sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representative s, and distributors. to find t he office closest to you, visit us at cypress.com/sales. products psoc psoc.cypress.com clocks & buffers clocks.cypress.com wireless wireless.cypress.com memories memory.cypress.com image sensors image.cypress.com psoc solutions general psoc.cypress.com/solutions low power/low voltage psoc.cypress.com/low-power precision analog psoc.cypress.com/precision-analog lcd drive psoc.cypress.com/lcd-drive can 2.0b psoc.cypress.com/can usb psoc.cypress.com/usb document title: cy14b104la, cy14b104na 4 mbit (512k x 8/256k x 16) nvsram document number: 001-49918 rev. ecn no. orig. of change submission date description of change ** 2606696 gvch/pyrs 11/13/08 new data sheet *a 2672700 gvch/pyrs 03/12/09 added best practices added cy14b104na-ba25i part number added footnote12 for hz/lz parameters *b 2710274 gvch/aesa 05/22/09 moved data sheet status from preliminary to final updated autostore operation updated i sb test condition updated footnote 9 referenced footnote 12 to v ccrise , t hhhd and t lzhsb parameters updated v hdis parameter description updated figure 12 *c 2738586 gvch 07/15/09 page 4: updated ha rdware store operation description page 5: updated software store description updated t delay parameter description updated footnote 20 added footnote 25 referenced footnote 25 to figure 12 and figure 13 [+] feedback [+] feedback

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